Accession Number : ADP007585

Title :   Nonlinear Absorption Processes at Half the Band Gap in GaAs Based Semiconductors,

Corporate Author : UNIVERSITY OF CENTRAL FLORIDA ORLANDO CENTER FOR RESEARCH IN ELECTRO-OPTICS A ND LASERS

Personal Author(s) : Villeneuve, A. ; Stegeman, G. I. ; Scelsi, G. ; Ironside, C. N. ; Aitchison, J. S.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : The utility of the ultrafast nonlinearity in semiconductor waveguides operated below the band gap is limited by two photon absorption Beta (Alpha = Beta I where I is the intensity) which does not allow a nonlinear 2 Pi phase shift over one absorption length. However, the two photon coefficient should be zero below half the band gap, potentially allowing for all-optical device operation there. Here we report the first measurements of two photon absorption in GaAs waveguides in the vicinity of half the band gap.

Descriptors :   *OPTICAL WAVEGUIDES, COEFFICIENTS, LENGTH, MEASUREMENT, OPERATION, PHASE SHIFT, PHOTONS, SEMICONDUCTORS, TWO PHOTON ABSORPTION, SYMPOSIA, RADIATION ABSORPTION, ENERGY BANDS, ENERGY GAPS, GALLIUM ARSENIDES, MODE LOCKED LASERS, TUNABLE LASERS, LIGHT PULSES.

Subject Categories : Optics
      Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE