Accession Number : ADP007594

Title :   Nonlinearity Enhancement in a Four Layer GaAs/GaAlAs Waveguide,

Corporate Author : SOUTH CHINA NORMAL UNIV GUANGZHOU

Personal Author(s) : Chen, Shaomei ; Liao, Chagangjun ; Jin, Huaichen ; Huang, Zhaohong

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : The photorefractive effect in semiconductor materials is attractive for processing low intensity near-infrared optical signals which are important for optical communication and optical computing. Photoinduced large nonlinearity in GaAs materials has been extensively studied in bulk material. A few is with optical waveguide of GaAs materials though the signal amplification in GaAs waveguide via two wavemixing has been proposed.

Descriptors :   *OPTICAL WAVEGUIDES, *HETEROJUNCTIONS, *OPTICAL CIRCUITS, AMPLIFICATION, BULK MATERIALS, INTENSITY, LOW INTENSITY, MATERIALS, OPTICAL COMMUNICATIONS, PROCESSING, SEMICONDUCTORS, SIGNALS, WAVEGUIDES, SYMPOSIA, CHINA, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, GRATINGS(SPECTRA).

Subject Categories : Optics
      Non-radio Communications

Distribution Statement : APPROVED FOR PUBLIC RELEASE