Accession Number : ADP007610

Title :   Directional Coupler with Varying Placement of Nonlinearity in Quaternary Semiconductors,

Corporate Author : FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Hussell, C. P. ; Srivastava, R. ; Ramaswamy, R. V. ; Bloemer, M.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : The large optical nonlinearities exhibited by III-V multiple quantum well (MQW) materials have afforded some optimism in achieving large all-optical switching ratios with low threshold power and short device length. By using multiple quantum wells in the coupling as well as the guiding regions, Kam Wa was the first to demonstrate partial switching between two parallel GaAs/AlGaAs MQW channel waveguides. This device, however, exhibited very high loss. Cada argued that much better performance in terms of lower loss may be achieved by placing the MQW nonlinear medium in the coupling region only, but the experimental device still exhibited only partial switching. Several approaches to solve the problem of the nonlinear directional couplers in semiconductors have been proposed and since no general exact analytical treatment including absorption and nonlinear saturation is available, approximations or numerical simulation must be used. In this regard, Caglioti presented a more complete analytical estimate for the characteristics of nonlinear directional couplers for operation above the resonance with large detuning.

Descriptors :   *OPTICAL SWITCHING, *NONLINEAR OPTICS, ABSORPTION, CHANNELS, DETUNING, DIRECTIONAL, ESTIMATES, LENGTH, OPERATION, POWER, RATIOS, REGIONS, RESONANCE, SATURATION, SEMICONDUCTORS, SIMULATION, SYMPOSIA, OPTICAL WAVEGUIDES, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, WAVEGUIDE COUPLERS.

Subject Categories : Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE