Accession Number : ADP007632

Title :   Low-Temperature Epitaxially Grown GaAs as a High-Speed Photoconductor for Terahertz Spectroscopy,

Corporate Author : MICHIGAN UNIV ANN ARBOR ULTRAFAST SCIENCE LAB

Personal Author(s) : Chwalek, James M. ; Whitaker, John F. ; Mourou, Gerard A.

Report Date : 22 MAY 1992

Pagination or Media Count : 5

Abstract : Photoconductive elements have been employed to generate and detect ultrafast electrical signals in many areas of optical electronics. One outstanding application of these structures, when they are fabricated on substrates with rapid recombination times, is as transmitting and receiving antennas that can be used for millimeter-wave and submillimeter-wave spectroscopy. Experiments which characterize a terahertz radiation system using dipole-like antennas have been carried out, and the system has been applied to the spectroscopy of dielectrics and semiconductors. Assuming that short laser pulses and a high quality imaging system are available, the fidelity of the broadcast signals and the resolution attainable for a spectroscopy system depend primarily on the photoconductor material and antenna system.

Descriptors :   *PHOTOCONDUCTORS, *ELECTROOPTICS, *GALLIUM ARSENIDES, ANTENNAS, DIELECTRICS, DIPOLES, LASERS, MATERIALS, MILLIMETER WAVES, PULSES, RADIATION, RESOLUTION, SEMICONDUCTORS, SIGNALS, SPECTROSCOPY, STRUCTURES, SUBMILLIMETER WAVES, SUBSTRATES, TRANSMITTING, EPITAXIAL GROWTH, OPTICAL DETECTION, LOW TEMPERATURE, ELECTROMAGNETIC RADIATION, SYMPOSIA.

Subject Categories : Electrooptical and Optoelectronic Devices
      Optical Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE