Accession Number : ADP007647

Title :   Ultrafast Graded Double-Heterostructure p-i-n Photodiode,

Corporate Author : CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Crawford, D. L. ; Wey, Y. G. ; Giboney, K. ; Bowers, J. E. ; Rodwell, M. J.

Report Date : 22 MAY 1992

Pagination or Media Count : 5

Abstract : A 5 micro x 5 micron double heterostructure InGaAs/InP pin photodiode is reported with a measured response of 5 ps and a deconvolved device impulse response of 3.8 ps. The double heterostructure employed reduces carrier diffusion and the graded heterobarriers play a key role in optimizing the device response speed by minimizing charge storage and device series resistance.

Descriptors :   *PHOTODIODES, *OPTICAL COMMUNICATIONS, *ELECTROOPTICS, PINS, RECREATION, RESISTANCE, RESPONSE, STORAGE, VELOCITY, INDIUM, INDIUM PHOSPHIDES, GALLIUM ARSENIDES, EPITAXIAL GROWTH, PHOTODETECTORS, SYMPOSIA.

Subject Categories : Electrooptical and Optoelectronic Devices
      Optical Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE