Accession Number : ADP007648

Title :   Picosecond Metal-Semiconductor-Metal Photodetectors with Sub-100-Nm finger Spacing and Finger Width in GaAs,

Corporate Author : MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Liu, Yue ; Fischer, Paul B. ; Chou, Stephen Y.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : We have fabricated metal-semiconductor-metal photodetectors with sub-100-nm finger spacing and finger width on MBE-grown GaAs, which are, to our knowledge, the smallest ever reported. DC measurement shows that they have low dark current and high sensitivity. Monte-Carlo simulations demonstrate that the response time of the photodetectors for a 30 nm finger spacing can be as short as 0.4 ps, and the cut-off frequency can be over 1 TH2.

Descriptors :   *PHOTODETECTORS, *ELECTROOPTICS, FINGERS, FREQUENCY, HIGH SENSITIVITY, MEASUREMENT, METALS, RESPONSE, SEMICONDUCTORS, SENSITIVITY, SIMULATION, TIME, WIDTH, GALLIUM ARSENIDES, EPITAXIAL GROWTH, OPTICAL COMMUNICATIONS, SYMPOSIA.

Subject Categories : Electrooptical and Optoelectronic Devices
      Optical Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE