Accession Number : ADP007652
Title : Recent Advances in Ultrafast High-Electron-Mobility Transistor-Technology,
Corporate Author : HUGHES RESEARCH LABS MALIBU CA
Personal Author(s) : Nguyen, Loi D.
Report Date : 22 MAY 1992
Pagination or Media Count : 3
Abstract : Recent advances in material growth and fabrication process have made possible the realization of a new class of ultra-fast High Electron Mobility Transistors (HEMTs) in the AlInAs/GaInAs material system (lattice-matched to InP). In the last three (3) years alone, through improvements in materials and shrinking of gate length, the speed of state-of-the-art AlInAs/GaInAs HEMTs has been increased at an astounding rate: from 80 GHz in 1987 to 250 GHz as of today. Such a pace of progress, however, cannot be maintained indefinitely. As the gate length approaches the 0.1 PM regime, it becomes increasingly more difficult to improve the device speed by simply reducing the gate length. In this gate length regime, parasitic delays, such as drain delay (due to the extension of the drain depletion region) and capacitance charging time (gate pad and fringe), represent a large portion of the total delay and will ultimately limit the device extrinsic speed.
Descriptors : *ELECTRON MOBILITY, *TRANSISTORS, APPROACH, CAPACITANCE, DELAY, DEPLETION, ELECTRONS, FABRICATION, LENGTH, MATERIALS, MOBILITY, RATES, STATE OF THE ART, VELOCITY, ELECTROOPTICS, GALLIUM ARSENIDES, INDIUM PHOSPHIDES, SCHOTTKY BARRIER DEVICES, FABRICATION, SYMPOSIA.
Subject Categories : Electrical and Electronic Equipment
Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE