Accession Number : ADP007654

Title :   Transient Simulation of Ultrasmall GaAs MESFET using Quantum Moment Equations,

Corporate Author : ARIZONA STATE UNIV TEMPE CENTER FOR SOLID STATE ELECTRONICS RESEARCH

Personal Author(s) : Zhou, J. -R. ; Kriman, A. M. ; Ferry, D. K.

Report Date : 22 MAY 1992

Pagination or Media Count : 5

Abstract : We present transient simulations of small GaAs MESFETs. Transient switching oscillation exhibit a strong peak in the frequency domain which is modified by quantum effects.

Descriptors :   *SEMICONDUCTOR DEVICES, *FIELD EFFECT TRANSISTORS, FREQUENCY, FREQUENCY DOMAIN, OSCILLATION, SIMULATION, SWITCHING, TRANSIENTS, GALLIUM ARSENIDES, VERY LARGE SCALE INTEGRATION, ELECTROOPTICS, SYMPOSIA.

Subject Categories : Electrical and Electronic Equipment
      Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE