Accession Number : ADP007666
Title : Numerical Simulations of an Actively Q-Switched Semiconductor Laser,
Corporate Author : CHALMERS UNIV OF TECHNOLOGY GOETEBORG (SWEDEN)
Personal Author(s) : Jonsson, Bjoern ; Eng, Sverre T.
Report Date : 22 MAY 1992
Pagination or Media Count : 6
Abstract : In this work, the travelling-wave rate-equations have been used to numerically simulate the performance of an actively Q-switched GaAs/AlGaAs twin-electrode laser. For modulation frequencies from 1.0 to 3.0 GHz optical output pulses of 20 - 23 ps were obtained. The calculated results of this model have been compared with experimental results and good agreement was found. The computer model is versatile, easy to implement on a small PC-type computer, and it can, without any modifications, be used to simulate the dynamic behavior of a large variety of optoelectronic devices. Hence, we believe that the travelling-wave rate equations can be an important tool for simulating ultrafast pulse generation in optoelectronic devices.
Descriptors : *ELECTROOPTICS, *SEMICONDUCTOR LASERS, *Q SWITCHING, COMPUTERS, DYNAMICS, ELECTRODES, EQUATIONS, LASERS, MODELS, MODULATION, OUTPUT, PULSES, GALLIUM ARSENIDES, ALUMINUM ALLOYS, OPTICAL COMMUNICATIONS, FIBER OPTICS, MATHEMATICAL MODELS, SYMPOSIA, OPTICAL SWITCHING, REFLECTIVITY.
Subject Categories : Lasers and Masers
Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE