Accession Number : ADP007671

Title :   Temperature Dependence of the Resonant Tunneling Process,

Corporate Author : WEIZMANN INST OF SCIENCE REHOVOT (ISRAEL)

Personal Author(s) : Bar-Joseph, I. ; Gedalyahu, Y. ; Yacoby, A. ; Woodward, T. K. ; Chemla, D. S.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : We use differential absorption spectroscopy to investigate the temperature dependence of the accumulated charge in a resonant tunneling diode. We find that the charge density is approximately constant between 10-300K, and that the electrons are thermalized with the lattice at all temperatures.

Descriptors :   *TUNNELING(ELECTRONICS), *TUNNEL DIODES, *ELECTROOPTICS, ABSORPTION, CHARGE DENSITY, CONSTANTS, DENSITY, DIODES, ELECTRONS, SPECTROSCOPY, TEMPERATURE, RESONANCE, PHOTONS, SYMPOSIA.

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE