Accession Number : ADP007673

Title :   Competition Between Tunneling and Exciton Formation for Photoexcited Carriers in Asymmetric Double Wells,

Corporate Author : MAX-PLANCK-INST FUER FESTKOERPERFORS- CHUNG STUTTGART (GERMANY F R)

Personal Author(s) : Kuhl, J. ; Strobel, R. ; Eccleston, R. ; Koehler, K.

Report Date : 22 MAY 1992

Pagination or Media Count : 6

Abstract : The formation of excitons from photoexcited free carriers in a GaAs asymmetric double quantum well tunneling structure is shown to occur by a bimolecular process. Using the non-linear luminescence cross-correlation technique, a bi-molecular formation coefficient of 6xlO-12cm2/ps is determined. The electron and hole tunneling times are also simultaneously obtained.

Descriptors :   *TUNNELING(ELECTRONICS), *OPTICAL WAVEGUIDES, COEFFICIENTS, CORRELATION TECHNIQUES, CROSS CORRELATION, ELECTRONS, EXCITONS, LUMINESCENCE, STRUCTURES, GALLIUM ARSENIDES, ELECTROOPTICS, PHOTOLUMINESCENCE, ELECTRIC FIELDS, SYMPOSIA.

Subject Categories : Electrooptical and Optoelectronic Devices
      Fiber Optics and Integrated Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE