Accession Number : ADP007675

Title :   Strained-Layers for Electronics and Optoelectronics,

Corporate Author : SANDIA NATIONAL LABS ALBUQUERQUE NM

Personal Author(s) : Myers, David R.

Report Date : 22 MAY 1992

Pagination or Media Count : 6

Abstract : The strain associated with intentionally lattice mismatched (strained-layer) heteroepitaxy provides a novel method for tailoring material band structure to enhance device performance through optimization of material structure. The applications of strained-layer epitaxy to heterojunction transistors and semiconductor lasers are presented.

Descriptors :   *SEMICONDUCTORS, *JUNCTION TRANSISTORS, *ELECTROOPTICS, *SEMICONDUCTOR DEVICES, HETEROJUNCTIONS, LASERS, LAYERS, MATERIALS, OPTIMIZATION, SEMICONDUCTOR LASERS, STRUCTURES, TRANSISTORS, EPITAXIAL GROWTH, CRYSTAL LATTICES, GALLIUM ARSENIDES, ALUMINUM ALLOYS, SYMPOSIA.

Subject Categories : Electrooptical and Optoelectronic Devices
      Solid State Physics
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE