Accession Number : ADP007676

Title :   Characterizations of Terahertz Optoelectronic Behavior of GaAs Epilayers Containing Arsenic Precipitates,

Corporate Author : IBM RESEARCH DIV SAN JOSE CA

Personal Author(s) : Warren, A. C. ; Katzenellenbogen, N. ; Grischkowsky, D. ; Woodall, J. M. ; Melloch, M. R.

Report Date : 22 MAY 1992

Pagination or Media Count : 2

Abstract : Using GaAs epilayers with arsenic precipitates (GaAs:As) as the photoconductive material in a broad-band optoelectronic teraHz beam system, we have generated and detected freely propagating, subpsec electromagnetic pulses. The As precipitates occur as a result of epi-growth at 250 C followed by a 600 C. anneal, yielding a high-quality, epitaxial matrix essentially free of point defects.

Descriptors :   *ELECTROOPTICS, *PHOTOCONDUCTORS, *EPITAXIAL GROWTH, ARSENIC, ELECTROMAGNETIC PULSES, MATERIALS, POINT DEFECTS, PRECIPITATES, PULSES, GALLIUM ARSENIDES, PHOTOCONDUCTIVITY, SYMPOSIA.

Subject Categories : Electrooptical and Optoelectronic Devices
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE