Accession Number : ADP007677

Title :   Transient Absorption of Low-Temperature Molecular-Beam Epitaxy Grown GaAs,

Corporate Author : MICHIGAN UNIV ANN ARBOR ULTRAFAST SCIENCE LAB

Personal Author(s) : Norris, T. B. ; Sha, W. ; Schaff, W. J. ; Song, X. J. ; Lillental-Weber, Z.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : We have applied time-resolved absorption spectroscopy to study the near-band-edge carrier dynamics of low temperature-MBE-grown GaAs, in order to directly observe the carrier relaxation and lifetime for this material.

Descriptors :   *EPITAXIAL GROWTH, *GALLIUM ARSENIDES, *ELECTROOPTICS, *PHOTODETECTORS, ABSORPTION, DYNAMICS, MATERIALS, SPECTROSCOPY, TIME, OPTICAL DETECTION, FIELD EFFECT TRANSISTORS, SYMPOSIA.

Subject Categories : Electrooptical and Optoelectronic Devices
      Solid State Physics
      Optical Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE