Accession Number : ADP007678
Title : Comparison of Oxygen Ion- and Proton-Implanted GaAs Photoconductive Switches,
Corporate Author : MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Hung, Sheng-lung L. ; Chauchard, Eve A. ; Lee, Chi H. ; Smith, Thane ; Lee, Timothy T.
Report Date : 22 MAY 1992
Pagination or Media Count : 5
Abstract : Oxygen ion and proton implanted GaAs photoconductive (PC) switches which can be used for on-wafer characterization of GaAs MMIC's have been evaluated. The Oxygen switch performed better in terms of switch sensitivity and bandwidth. It has been used to measure the S-parameter of a 3 stage 12 GHz MMIIC amplifier. A good agreement between the PC sampling technique and the network analyzer was achieved up to a 40 db dynamic range.
Descriptors : *PHOTOCONDUCTORS, *OPTICAL SWITCHING, *GALLIUM ARSENIDES, AMPLIFIERS, ANALYZERS, BANDWIDTH, DYNAMIC RANGE, DYNAMICS, IONS, NETWORKS, OXYGEN, PARAMETERS, PROTONS, SAMPLING, SENSITIVITY, SWITCHES, ELECTROOPTICS, PHOTOCONDUCTIVITY, SYMPOSIA.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE