Accession Number : ADP007679
Title : Femtosecond Refractive and Absorptive Nonlinearities Due to Real Carriers in GaAs,
Corporate Author : ROCHESTER UNIV NY LAB FOR LASER ENERGETICS
Personal Author(s) : Gong, T. ; Fauchet, P. M.
Report Date : 22 MAY 1992
Pagination or Media Count : 7
Abstract : The optical properties of gallium arsenide continue to attract interest because of the development of electro-optical and all-optical devices made of III-V semiconductors. The study of ultrafast changes in optical constants (both absorption coefficient and refractive index) is especially important for developing high-speed and high-bit-rate devices.
Descriptors : *SEMICONDUCTORS, *GALLIUM ARSENIDES, *ELECTROOPTICS, *NONLINEAR OPTICS, ABSORPTION, ABSORPTION COEFFICIENTS, COEFFICIENTS, OPTICAL PROPERTIES, RATES, VELOCITY, LASER BEAMS, SYMPOSIA.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE