Accession Number : ADP007681

Title :   Photon-Assisted Resonant Tunneling through a GaAs/AlGaAs Multiple Quantum Well Structure,

Corporate Author : CHALMERS UNIV OF TECHNOLOGY GOETEBORG (SWEDEN)

Personal Author(s) : Jonsson, Bjorn ; Andersson, Ingemar ; Larsson, Anders ; Andersson, Thorwald ; Westin, Johan

Report Date : 22 MAY 1992

Pagination or Media Count : 3

Abstract : The use of bandgap engineering techniques to tailor the perpendicular transport characteristics of layered semiconductor structures has resulted in a variety of new phenomena and devices concepts . In particular the coherent interaction of electron waves reflected at interfaces gives rise to resonant tunneling effects which filter electrons of certain energy through the structure. A structure specifically designed for electron energy filtering is the variably spaced superlattice energy filter (VSSEF) in which the quantized states in adjacent quantum wells become aligned under appropriate bias conditions.

Descriptors :   *SEMICONDUCTORS, *TUNNELING(ELECTRONICS), *COHERENT OPTICAL RADIATION, *PHOTOCONDUCTORS, BIAS, ELECTRON ENERGY, ELECTRONS, ENERGY, ENGINEERING, FILTERS, FILTRATION, INTERACTIONS, INTERFACES, STRUCTURES, SUPERLATTICES, TRANSPORT, OPTICAL WAVEGUIDES, RESONANCE, GALLIUM ARSENIDES, ALUMINUM ALLOYS, PHOTONS, OPTICAL DETECTION, SYMPOSIA.

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE