Accession Number : ADP007754
Title : Microstructure Development During Microwave Annealing of Dense Silicon Nitride,
Corporate Author : OAK RIDGE NATIONAL LAB TN
Personal Author(s) : Tiegs, T. N. ; Ferber, M. K. ; Kiggans, J. O. ; More, K. L. ; Hubbard, C. M.
Report Date : 27 APR 1992
Pagination or Media Count : 10
Abstract : Microwave annealing of dense silicon nitride-based ceramics can result in substantial SiO volatilization from the grain boundary phases and compositional changes of those phases. It also results in further alpha-to-beta Si3N4 transformation accompanied by grain growth. These changes occur at bulk temperatures well below comparable observations in conventional heating. The differences are believed due to enhanced diffusion within the intergranular phases.
Descriptors : *MICROWAVES, *SILICON NITRIDES, *CERAMIC MATERIALS, ANNEALING, BOUNDARIES, DIFFUSION, GRAIN BOUNDARIES, GRAIN GROWTH, HEATING, NITRIDES, SILICON, TEMPERATURE, TRANSFORMATIONS, HIGH TEMPERATURE, STRENGTH(MECHANICS), FRACTURE(MECHANICS), TOUGHNESS, PROCESSING, SINTERING, HOT PRESSING, SYMPOSIA.
Subject Categories : Ceramics, Refractories and Glass
Radiofrequency Wave Propagation
Distribution Statement : APPROVED FOR PUBLIC RELEASE