Accession Number : ADP007823

Title :   High Contrast Photonic Gate Arrays Consisting of Vertically Integrated Multiple-Quantum-Well Reflection Modulators and Phototransistors,

Corporate Author : NIPPON TELEGRAPH AND TELEPHONE CORP IBARAKI OPTO-ELECTRONIC LABS

Personal Author(s) : Amano, Chikara ; Matsuo, Shinji ; Kurokawa, Takashi

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : Given their extremely high-speed capability, optical logic gates based on the quantum confined Stark effect (QCSE)1 of multiple-quantum-well (MQW) structures are highly promising as basic devices for photonic signal processing. Although a number of schemes have been demonstrated including Symmetric Self Electro-optic Effect Devices (S-SEED)2, the contrast ratios usually obtained are insufficient due to the short modulation path. We have developed novel photonic gate arrays consisting of vertically integrated GaAs/AlGaAs MQW reflection modulators and GaAs/AlGaAs heterojunction phototransistors (HPT). They operate as NOR gates with high contrast ratio and optical gain.

Descriptors :   *NOR GATES, *PHOTONICS, *PHOTOTRANSISTORS, *OPTICAL CIRCUITS, *LIGHT MODULATORS, ARRAYS, CONTRAST, GAIN, HETEROJUNCTIONS, MODULATION, OPTICS, PATHS, PROCESSING, RATIOS, REFLECTION, SIGNAL PROCESSING, STARK EFFECT, COMPUTER LOGIC, JAPAN.

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE