Accession Number : ADP007826
Title : High Power Extremely Shallow Quantum Well Modulators,
Corporate Author : AT AND T BELL LABS HOLMDEL NJ
Personal Author(s) : Goossen, K. W. ; Cunningham, J. E. ; Jan, W. Y. ; Chirovsky, L. M. F. ; Morgan, R. A.
Report Date : 22 MAY 1992
Pagination or Media Count : 4
Abstract : Light modulators based on electroabsorption in quantum wells (QW's) have been extensively studied in recent years. Their operation relies on the fact that at room temperature a strong exciton can exist due to confinement in the quantum wells, which results in a strong absorption features which can be manipulated with an applied electric field. Applications include optical interconnection of integrated circuits, lightwave applications, and optical computing. For the latter there exists self electro-optic effect devices (SEED'S) which comprise of a QW p-i-n modulator in series with a battery and a load which may be another QW modulator. This circuit is bistable because of the negative resistance of the reverse biased QW modulator when illuminates at the QW exciton peak. This results from the fact that the exciton red-shifts with increasing electric field, causing the absorption, and hence the photocurrent, to decrease with increasing reverse bias.
Descriptors : *LIGHT MODULATORS, ABSORPTION, BIAS, ELECTRIC FIELDS, EXCITONS, INTEGRATED CIRCUITS, OPERATION, OPTICS, RESISTANCE, ROOM TEMPERATURE, OPTICAL SWITCHING, LOGIC CIRCUITS.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE