Accession Number : ADP007831
Title : Low Driving Voltage and Low Chirp InGaAs/InAlAs MQW Electro-Absorption Modulator,
Corporate Author : HITACHI LTD TOKYO (JAPAN) CENTRAL RESEARCH LAB
Personal Author(s) : Sano, Hirohisa ; Inoue, Hiroaki ; Tanaka, Shigehisa ; Hanatani, Shoichi ; Ishida, Koji
Report Date : 22 MAY 1992
Pagination or Media Count : 4
Abstract : With the progress of the ultra high-bit rate optical transmission system, there has been much interest in the InGaAs/InAlAs MQW electro-absorption (EA) modulators because of their wide bandwidth and high modulation efficiency around 1.55um wavelength. However, the modulator should be not only high-speed and low-driving voltage but low loss and low chirp for the practical use. In this paper, we analyze the absorption layer thickness dependence of the modulation characteristics for the InGaAs/InAlAs MQW EA modulators. From the analysis, the new device structure and experimental results of low driving voltage and low chirp MQW EA modulator for 10Gb/s transmission are demonstrated.
Descriptors : *LIGHT MODULATORS, *QUANTUM ELECTRONICS, ABSORPTION, BANDWIDTH, LAYERS, LOW LOSS, MODULATION, RATES, STRUCTURES, THICKNESS, VELOCITY, VOLTAGE, GALLIUM ARSENIDES, ALUMINUM ARSENIDES, INDIUM COMPOUNDS, DRIVES(ELECTRONICS), QUANTUM EFFICIENCY, JAPAN.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE