Accession Number : ADP007834
Title : Increased Optical Saturation Intensities in GaInAs Multiple Quantum Wells(MQW) with AlGaInAs Barriers,
Corporate Author : AT AND T BELL LABS HOLMDEL NJ
Personal Author(s) : Wood, Thomas H. ; Pastalan, John Z. ; Burrus, Charles A. ; Chang, Tao Y. ; Sauer, Nicholas J.
Report Date : 22 MAY 1992
Pagination or Media Count : 4
Abstract : Electroabsorptive devices made with quantum wells and bulk III-V semiconductors are proving to be useful for both optical modulation and optical logic elements. For many applications, the saturation of this electroabsorption at high optical intensities is a serious problem. For example, both external modulators and SEEDs display contrast saturation at high power. A decrease in bandwidth at high power has also been observed. Although phase-space filling is believed to be the dominant mechanism of absorption saturation in the absence of a field in MQWs, Cavicchi demonstrated that large photogenerated hole populations could screen fields applied to MQWS.
Descriptors : *LIGHT MODULATORS, *ELECTROOPTICS, *QUANTUM ELECTRONICS, ABSORPTION, BANDWIDTH, CONTRAST, EXTERNAL, HIGH POWER, INTENSITY, LOGIC ELEMENTS, MODULATION, PHASE, POWER, SATURATION, SEMICONDUCTORS, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, INDIUM COMPOUNDS.
Subject Categories : Electrooptical and Optoelectronic Devices
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE