Accession Number : ADP007838

Title :   Enhanced and Inhibited Spontaneous Emission in Vertical Microcavity Structures with Two Kinds of GaAs/AlGaAs Quantum Wells,

Corporate Author : TOKYO UNIV (JAPAN)

Personal Author(s) : Arakawa, Y. ; Yamauchi, T. ; Nishioka, M.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : Spontaneous emission is not an immutable interaction between a material and the vacuum field. In fact, enhancement and inhibition of spontaneous emission rates through change in the cavity have been observed in the fluorescence of dye molecules deposited in the all part of the Fabry-Perot resonator. When the cavity length is smaller than the half wavelength of the fluorescence (Lambda/2), the spontaneous emission is inhibited. Otherwise it is enhanced. Thus the cavity effects can control the interaction between atoms and vacuum fields to the resonant mode, changing the emission rate into the resonator modes dramatically by tuning the resonator. Moreover, the difference in the mode densities between the enhancement and the inhibition also affects the change in the spontaneous emission lifetime. On the other hand, these enhancement and inhibition of the spontaneous emission have been also investigated in the semiconductor lasers, as suggested by Yablonovitch. Recently, Yamamoto. demonstrated such enhancement and inhibition of the spontaneous emission by preparing both Lambda- and lambda/2vertical cavity lasers which are epitaxially grown on two different wafers.

Descriptors :   *PHOTOLUMINESCENCE, *QUANTUM ELECTRONICS, AUGMENTATION, CAVITIES, CONTROL, DENSITY, DYES, EMISSION, FLUORESCENCE, HANDS, INHIBITION, INTERACTIONS, LENGTH, RATES, RESONATORS, SEMICONDUCTOR LASERS, TUNING, VACUUM, WAFERS, JAPAN, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES.

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE