Accession Number : ADP007845

Title :   Band Gap Renormalization in Quantum Confined Semiconductor Systems,

Corporate Author : ZENTRALINSTITUT FUER ELEKTRONENPHYSIK BERLIN (GERMANY F R)

Personal Author(s) : Zimmerman, R.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : The band gap renormalization (BGR) at high carrier densities is a many-body effect which has been studied intensively in the past for bulk semiconductor materials. The renewed inter in the BGR issue is stimulated by measurements on systems of reduced dimensionality like quantum wells or inversion lay A careful lineshape analysis of optical experiments is needed to extract reasonable BGR values. Interestingly enough these studies have revealed that the different sublevels do not shift at the same amount. This can be traced back to the well-documented non-rigid shift of the energy bands in the bulk since increasing sublevel numbers refer to increasing momentum in the growth direction.

Descriptors :   *BULK SEMICONDUCTORS, *ENERGY BANDS, *CRYSTAL GROWTH, DENSITY, INVERSION, MATERIALS, MEASUREMENT, GERMANY.

Subject Categories : Solid State Physics
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE