Accession Number : ADP007847
Title : Growth and Performance of GaInP/A1GaInP Visible Light Emitting Laser-Diodes,
Corporate Author : PHILIPS RESEARCH LABS EINDHOVEN (NETHERLANDS)
Personal Author(s) : Valster, Ad ; Acket, Gerard A.
Report Date : 22 MAY 1992
Pagination or Media Count : 4
Abstract : The quaternary alloy Al(x)Ga(l-x-y)In(y)P has the largest direct bandgap next to the nitrides among all III-V compound semiconductors (1). This alloy can be grown lattice matched to a GaAs substrate ( y- 0.5 ) and spans at room temperature a direct bandgap ranging from 1.85 eV ( for x=O to about 2.25 eV ( for x=0.3 ) at the gamma - X cross over. To date the organometallic vapour phase epitaxy OMVPE technique has been demonstrated to be the most suitable growth technique for the AlGaInP alloy (2). High quality GaInP and AlGaInP bulk layers have been produced using low pressure OMVPE.
Descriptors : *SEMICONDUCTOR LASERS, *EPITAXIAL GROWTH, ALLOYS, LAYERS, LOW PRESSURE, PRESSURE, QUALITY, ROOM TEMPERATURE, SUBSTRATES, GALLIUM PHOSPHIDES, INDIUM PHOSPHIDES, THERMAL PROPERTIES, ENERGY GAPS, ENERGY BANDS, VAPOR PHASES.
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE