Accession Number : ADP007852

Title :   Thermal Emission of Carriers in Strained In(x)Ga(1-x)As/GaAs,

Corporate Author : STUTTGART UNIV (GERMANY F R) INST FUER PHYSIKALISCHE CHEMIE

Personal Author(s) : Bacher, G. ; Schweizer, H. ; Kovac, J.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : Strained InxGa1-xAs/GaAs heterostructures are recently used for the development of excellent semiconductor lasers. Among other things, the efficiency as well as the high frequency properties of quantum well lasers are strongly influenced by the dynamics of the carrier capture into the quantum well. Especially threshold can be increased drastically by carrier leakage above the barriers. The capture time in laser structures is determined by both, the carrier transport to the quantum well and the scattering from the barrier states into the quantum well at t he interface. The time constants found in typical time-integrated or time-resolved experiments are mainly determined by the transport in the barrier, whereas the dynamics of the scattering process at the interface still remains unexplained.

Descriptors :   *GALLIUM ARSENIDE LASERS, BARRIERS, DYNAMICS, HIGH FREQUENCY, SEMICONDUCTOR LASERS, SEMICONDUCTORS, STRUCTURES, TIME, TRANSPORT, GERMANY, QUANTUM EFFICIENCY, HETEROJUNCTIONS.

Subject Categories : Lasers and Masers
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE