Accession Number : ADP007854

Title :   Valence Band Structures of a Strained Quantum Well and Applications to Semiconductor Lasers,

Corporate Author : ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Chuang, Shun-Lien ; Chao, Calvin Y. P.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : Strain effects in quantum wells have been intensively investigated for applications to semiconductor lasers, photodetectors and electronic devices such as pseudomorphic high electronic mobility transistors. High quantum efficiency, high power (70 mW CW and 180 mW pulsed operation), modulation-doped In0.8Ga0.2As strained-layer (compression) quantum-well lasers emitting at 1.5 um wavelength have been reported. A record high power output (206 mW CW) strained-layer InGaAs/InP quantum-well laser emitting at 1.48 to 1.51 um using the effects of tension strain has been demonstrated. A very low threshold (92 A/cm2) strained-layer quantum-well laser at 1.6 um has also been obtained.

Descriptors :   *SEMICONDUCTOR LASERS, COMPRESSION, ELECTRONICS, HIGH POWER, LAYERS, MODULATION, OPERATION, OUTPUT, PHOTODETECTORS, QUANTUM EFFICIENCY, TENSION, TRANSISTORS, INDIUM PHOSPHIDES, GALLIUM ARSENIDES, ENERGY BANDS, ELECTRON MOBILITY.

Subject Categories : Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE