Accession Number : ADP007856

Title :   Cross-Well Charge Rates as a Function of Carrier Density in a GaAs/A1GaAs MQW Pin Modulator,

Corporate Author : UNIVERSITY OF CENTRAL FLORIDA ORLANDO CENTER FOR RESEARCH IN ELECTRO-OPTICS A ND LASERS

Personal Author(s) : Park, C. B. ; LiKamWa, P. ; Hutchings, D. C. ; Miller, A.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : One of the most promising devices to emerge for optical logic applications is the quantum well self electro-optic effect device (SEED) which employs a shift of exciton absorption feature with electric field via the quantum confined Stark effect (QCSE). The ultrafast response of this device is important for high frequency operation and depends on the detailed nature of the cross well carrier transport mechanisms. Previous measurements have employed the excite-probe technique with picosecond pulses to monitor thermionic emission and tunneling via transmission changes caused by the carriers leaving the wells and moving towards the contact regions. In the present work, we have extended the measurements to longer time delays and investigated the effects of higher carrier densities on the temporal response of the device. In this case, the response is significantly altered because of the space-charge field dynamically changing the absorption coefficient and the tunneling rates.

Descriptors :   *ELECTROOPTICS, *QUANTUM ELECTRONICS, *LIGHT MODULATORS, ABSORPTION COEFFICIENTS, DELAY, DENSITY, ELECTRIC FIELDS, EMISSION, EXCITONS, HIGH FREQUENCY, MEASUREMENT, MONITORS, OPERATION, OPTICS, PROBES, PULSES, RATES, RESPONSE, SPACE CHARGE, STARK EFFECT, THERMIONIC EMISSION, TRANSPORT, PIN DIODES, LOGIC DEVICES, TUNNELING(ELECTRONICS).

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE