Accession Number : ADP007859

Title :   High-Contrast Electron-Transfer GaAs/A1GaAs Multiple Quantum Well Waveguide Modulator,

Corporate Author : AT AND T BELL LABS HOLMDEL NJ

Personal Author(s) : Blum, O. ; Zucker, J. E. ; Chang, T. Y. ; Sauer, N. J. ; Divino, M.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : In this paper, we present the first demonstration of the barrier reservoir and quantum well electron transfer structure (BRAQWETS) concept in the GaAs/AlGaAs material system. The BRAQWETS uses an applied voltage (Vapp) to transfer electrons from the highly doped reservoir region to a quantum well, blue shifting the absorption edge in the quantum well due to bandfilling. Waveguide modulators with a 5 BRAQWETS active core exhibit contrast ratios as high as 75:1 in a 490 um-long device. We show how the operation and performance of the device can be understood in terms of the voltage-induced changes in the BRAQWETS energy band diagram and the corresponding photocurrent spectra.

Descriptors :   *HETEROJUNCTIONS, *LIGHT MODULATORS, *OPTICAL WAVEGUIDES, ABSORPTION, BARRIERS, BLUE(COLOR), CONTRAST, CORES, DEMONSTRATIONS, DIAGRAMS, EDGES, ELECTRON TRANSFER, ENERGY BANDS, OPERATION, RATIOS, RESERVOIRS, SHIFTING, SPECTRA, STRUCTURES, VOLTAGE, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, FREQUENCY SHIFT.

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE