Accession Number : ADP007860

Title :   Growth of Ultra-Thin Ga(x)In(1-x)As/InP Quantum Wells with Modulation Doping and Strained Structures,

Corporate Author : TOKYO INST OF TECH (JAPAN)

Personal Author(s) : Uchida, Toshi K. ; Yokouchi, N. ; Uchida, T. ; Miyamoto, T. ; Koyama, F.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : Lattice-matched GaInAs to InP is being avidly investigated for increasing device applications in optoelectronics. Recent advancements of epitaxial growth techniques have made these applications possible using sophisticated multilayer heterostructures such as quantum wells (QWs) and modulation doping. Progress in this area has also made it possible to coherently grow an entire range of GaxIn1-xAs (0<x<1) on to InP while keeping these layers less than a critical thickness. These pseudomorphic materials have drawn an increasing attention for optical and electronic devices. Although these devices have been successfully fabricated and demonstrated promising performance, some fundamental characteristics of unstrained and strained materials still need to be explored. We have grown modulation doped (4xlO19cm-3) Gao.47In0.53As QWs and biaxially strained QWs using GaxIn1-xAs/InP (0<x<0.32, compressive mode) on InP and optically characterized.

Descriptors :   *ELECTROOPTICS, *HETEROJUNCTIONS, DOPING, ELECTRONICS, EPITAXIAL GROWTH, LAYERS, MODULATION, THICKNESS, JAPAN, GALLIUM ARSENIDES, INDIUM PHOSPHIDES.

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE