Accession Number : ADP007861
Title : A High contrast, Low Insertion Loss Asymmetric Fabry Perot Modulator Operating at 4.1 Volts,
Corporate Author : UNIVERSITY COLL LONDON (UNITED KINGDOM) DEPT OF ELECTRONIC AND ELECTRICAL ENG INEERING
Personal Author(s) : Zouganeli, P. ; Whitehead, M. ; Stevens, P.J. ; Rivers, A. ; Parry, G.
Report Date : 22 MAY 1992
Pagination or Media Count : 4
Abstract : A very high contrast (>2OdB), low insertion loss ( 3.3dB) GaAs/AlGaAs multiple quantum well (MQW) reflection modulator with an operating voltage of -9V reverse bias has recently been demonstrated. The device was electrically a p-i-n diode with the MQW in the intrinsic region, and optically an asymmetric Fabry-Perot (FP) cavity. The back mirror of the FP cavity was formed using an integrated quarter wave reflector stack and exhibited a reflectivity of >95%. The front mirror was the natural air-semiconductor interface with a reflectivity of -30%. A reduction of the operating voltage, aiming at a high contrast, low insertion loss modulator is addressed in this paper.
Descriptors : *LIGHT MODULATORS, AIMING, AIR, BIAS, CAVITIES, CONTRAST, INSERTION LOSS, INTERFACES, MIRRORS, REDUCTION, REFLECTION, REFLECTIVITY, REFLECTORS, SEMICONDUCTORS, VOLTAGE, FABRY PEROT INTERFEROMETERS, SEMICONDUCTOR DIODES, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, GREAT BRITAIN.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE