Accession Number : ADP007871

Title :   Structure Dependence of Carrier Replenishment in Multiple Quantum Well Optical Amplifiers,

Corporate Author : AT AND T BELL LABS HOLMDEL NJ

Personal Author(s) : Wiesenfeld, J. M. ; Weiss, S. ; Chemia, D. S. ; Eisenstein, G. ; Koren, U.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : In forward biased quantum well structures, such as lasers and optical amplifiers, electrons and holes must flow through the barrier regions before they are captured by the quantum wells. This capture process, which concerns the scattering of a three-dimensional barrier state into a two-dimensional state in the quantum well, is of fundamental interest. It is also significant for devices, because it relates to the efficiency and modulation performance of quantum well lasers, as well as to the gain recovery time and, hence, gain saturation characteristics of quantum well optical amplifiers.

Descriptors :   *LASER AMPLIFIERS, BARRIERS, ELECTRONS, FLOW, GAIN, MODULATION, RECOVERY, SATURATION, STRUCTURES, THREE DIMENSIONAL, TWO DIMENSIONAL, PHOTOLUMINESCENCE, LIGHT SCATTERING, QUANTUM EFFICIENCY.

Subject Categories : Electrooptical and Optoelectronic Devices
      Optics
      Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE