Accession Number : ADP007875
Title : Application of Minibands to InAlAs/InGaAs Superlattice Avalanche Photodiodes,
Corporate Author : HITACHI LTD TOKYO (JAPAN) CENTRAL RESEARCH LAB
Personal Author(s) : Hanatani, S. ; Nakamura, H. ; Tanaka, S. ; Notsu, C. ; Ishida, K.
Report Date : 22 MAY 1992
Pagination or Media Count : 4
Abstract : An InAlAs/InGaAs superlattice Avalanche Photodiode (SL-APD) is of great interest for 10-Gb/s lightwave transmission, because it is expected to operate with a high gain-bandwidth product and a low multiplication noise 1). Recently, using the SL-APD, the receiver sensitivity of -24 dBm at 10 Gb/s was achieved 2). This is higher than that obtained using the conventional InP/InGaAs APDs. For the improvement of the 10-Gb/s receiver sensitivity, the SL structure must be optimized, because the characteristics of SL-APDs depend on it. From this point of view, we proposed a novel SL-APD structure with thin-width wells 3), however the effect of thin wells on high speed operation has not been sufficiently considered. This paper proposes an application of minibands to hetero-interfaces of a SL-APD to make wells thinner for high-speed and low-noise operation. High-speed electron transport through minibands is also discussed and demonstrated in a PIN-photodiode (PD) with minibands.
Descriptors : *PHOTODIODES, *SUPERLATTICES, *AVALANCHE DIODES, BANDWIDTH, ELECTRON TRANSPORT, HIGH GAIN, INTERFACES, LOW NOISE, MULTIPLICATION, NOISE, OPERATION, RECEIVERS, SENSITIVITY, STRUCTURES, VELOCITY, WIDTH, ALUMINUM ARSENIDES, GALLIUM ARSENIDES, INDIUM PHOSPHIDES, PIN DIODES, JAPAN.
Subject Categories : Electrooptical and Optoelectronic Devices
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE