Accession Number : ADP007880
Title : The Temperature Dependence of the Resonant Tunneling Process,
Corporate Author : WEIZMANN INST OF SCIENCE REHOVOT (ISRAEL)
Personal Author(s) : Bar-Joseph, I. ; Gedalyahu, Y. ; Yacoby, A. ; Woodward, T. K. ; Chemla, D. S.
Report Date : 22 MAY 1992
Pagination or Media Count : 4
Abstract : The nature of a resonant tunneling process that involves inelastic scattering events is of a wide interest lately. In this paper, we investigate the influence of inelastic scattering by measuring the tunneling characteristics at various temperatures. We show that the stored charge and the transit time are not sensitive to a large temperature change. We used a symmetric double barrier diode under electric bias to study the electrons tunneling process. Our sample was composed of two 70A InAlAs barriers and a 45A InGaAs well between them. The zero bias Fermi energy in the emitter and collector was 55 meV. A more detailed description of the sample is given at ref(4).
Descriptors : *TUNNELING(ELECTRONICS), *RESONANCE, ACCUMULATORS, BARRIERS, BIAS, DIODES, ELECTRONS, EMITTERS, ENERGY, INELASTIC SCATTERING, TEMPERATURE, TIME, SEMICONDUCTOR DIODES, ISRAEL.
Subject Categories : Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE