Accession Number : ADP007888

Title :   Fast Escape of Photocreated Carriers out of Shallow Quantum Wells,

Corporate Author : AT AND T BELL LABS HOLMDEL NJ

Personal Author(s) : Feldmann, J. ; Goossen, K. W. ; Miller, D. A. B. ; Fox, A. M. ; Cunningham, J. E.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : Recently, strong and well-resolved excitons have been observed in the room-temperature absorption spectra of shallow GaAs/AlxGal-xAs quantum wells for values of x as low as 0.02.1 In addition, these shallow quantum wells exhibit strong electroabsorption at low electric fields applied perpendicular to the layers. This pronounced electroabsorption effect at low biases is caused by both the red-shift of the exciton as observed for deeper quantum wells and the fact that the low AlxGal-xAs barriers cannot prevent the field-ionization of the exciton, hence giving field-induced broadening.

Descriptors :   *EXCITONS, *HETEROJUNCTIONS, ABSORPTION, ABSORPTION SPECTRA, BARRIERS, ELECTRIC FIELDS, LAYERS, ROOM TEMPERATURE, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE