Accession Number : ADP007889
Title : Femtosecond Time-Resolved Studies of High-Field Parallel Transport in GaAs Quantum Wells,
Corporate Author : MICHIGAN UNIV ANN ARBOR ULTRAFAST SCIENCE LAB
Personal Author(s) : Sha, W. ; Norris, T. B. ; Schaff, W. J.
Report Date : 22 MAY 1992
Pagination or Media Count : 4
Abstract : Ballistic transport of electrons in semiconductors has recently been a topic of great interest. These studies are important because ballistic transport is expected to play a role in the operation of a number of state-of-the-art semiconductor devices. Ballistic drift in a field-free region of electrons launched across a heterojunction has been observed. In this paper we describe experiments that apply optical spectroscopy to time-resolve the distribution functions of electrons in the presence of a strong electric field applied in the plane of a MQW structure. The carriers are injected with zero initial kinetic energy by a short laser pulse. The exciton field-ionization, electron quasi-ballistic acceleration, field-induced heating, and real-space transfer of electrons into the barrier region of the MQW are observed by monitoring the carrier distribution function using femtosecond-pump continuum-probe techniques.
Descriptors : *HETEROJUNCTIONS, *SEMICONDUCTOR DEVICES, *TRANSPORT PROPERTIES, ACCELERATION, BALLISTICS, BARRIERS, DISTRIBUTION FUNCTIONS, DRIFT, ELECTRIC FIELDS, ELECTRONS, EXCITONS, HEATING, IONIZATION, KINETIC ENERGY, LASERS, MONITORING, OPERATION, PROBES, PULSES, RECREATION, REGIONS, SEMICONDUCTORS, SPECTROSCOPY, STATE OF THE ART, GALLIUM ARSENIDES, PUMPING(ELECTRONICS).
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE