Accession Number : ADP007901

Title :   Coherent Strain Changes in Si-Ge Alloys Grown by Ion-Assisted Molecular Beam Epitaxy,

Corporate Author : IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Personal Author(s) : Atwater, H. A. ; Tsai, C. J. ; Vreeland, T.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : Although low energy ion bombardment has been employed in various contexts epitaxial growth, such as enhanced dopant incorporation, surface cleaning during plasma enhanced chemical vapor deposition, and direct low energy ion beam deposition, key questions about the interaction of low energy ions with growing surfaces remain unanswered. Improved understanding of ion-surface interactions during growth may yield additional elements of control over epitaxial film structure, strain state, and composition. Of particular interest for high quality epitaxial films is the identification of the regime in which surface and near-surface processes, such as surface diffusion and incorporation at growth sites, can be enhanced at low temperatures while avoiding or controlling damage in the deposited films.

Descriptors :   *SILICON ALLOYS, *GERMANIUM ALLOYS, *CRYSTAL STRUCTURE, ATOMS, CLEANING, CONTROL, DIFFUSION, DISPERSIONS, FILMS, INTERACTIONS, ION BEAMS, ION BOMBARDMENT, LAYERS, LOW ENERGY, MEASUREMENT, MODIFICATION, POINT DEFECTS, QUALITY, RATIOS, SITES, STRUCTURES, SURFACES, UNIFORMS, YIELD, ION BOMBARDMENT, VAPOR DEPOSITION, EPITAXIAL GROWTH, MOLECULAR BEAMS.

Subject Categories : Physical Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE