Accession Number : ADP007910

Title :   Silicon Atomic Layer Growth by Laser Beam/Si2H6 Adsorbates Interactions,

Corporate Author : HIROSHIMA UNIV (JAPAN)

Personal Author(s) : Nagasawa, Y. ; Tanaka, T. ; Miyazaki, S. ; Hirose, M.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : Saturated monomolecular adsorption of Si2H6 on a silicon surface held at temperatures around -60 deg C and subsequent irradiation of a single shot of ArF excimer laser fully decomposes the adsorbed layer to promote the atomic layer growth of Si. TEA CO2 laser irradiation at 1OP6 line, which selectively excites the surface SiH3 bond, significantly reduces the content of the bonded hydrogen in the silicon layer. Possible mechanisms for the silicon atomic layer growth and the hydrogen reduction are also discussed.

Descriptors :   *SILICON, *ADSORBATES, *LASER PUMPING, *SILANES, *PHOTOCHEMICAL REACTIONS, ADSORPTION, EXCIMERS, IRRADIATION, LAYERS, REDUCTION, SURFACES, JAPAN, TEA LASERS, CARBON DIOXIDE LASERS.

Subject Categories : Radiation and Nuclear Chemistry
      Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE