Accession Number : ADP007911

Title :   Laser-Induced Reactions of Semiconductor Surfaces with Chlorine,

Corporate Author : FUDAN UNIV SHANGHAI (CHINA) LASER CHEMISTRY LAB

Personal Author(s) : Qin, Qi Zong ; Li, Yu Lin ; Lu, Ping He ; Zhang, Zhuang Jian ; Jin, Zhong Kao

Report Date : 22 MAY 1992

Pagination or Media Count : 3

Abstract : Laser-induced chemical reaction of semiconductor with halogen and halogen compounds has attracted much attention in recent years due to its potential application in fabrication of microelectronic devices. We have reported UV and visible laser-induced reactions of Si and GaAs surfaces with chlorine using a CW molecular beam technique coupled with time-resolved mass spectrometry. This paper will present recent studies in our laboratory on laser-induced reactions of Ge(111), Si(111), GaAs(100) and InP(100) surfaces with chlorine molecules under 355-, 560-, and 1064-nm laser irradiations. We are particularly interested in the use of near infrared (1064-nm) laser photons as well as the promotion of reaction by raising the incident chlorine molecules' translational energy. The objective is to achieve a better understanding of the mechanism of laser-induced reaction and its potential application in the chemical etching of semiconductor.

Descriptors :   *CHLORINE, *SEMICONDUCTORS, *PHOTOCHEMICAL REACTIONS, *LASER PUMPING, ENERGY, ETCHING, FABRICATION, HALOGEN COMPOUNDS, HALOGENS, IRRADIATION, MASS, MASS SPECTROMETRY, MICROELECTRONICS, MOLECULAR BEAMS, PHOTONS, SPECTROMETRY, SURFACES, CHINA.

Subject Categories : Physical Chemistry
      Radiation and Nuclear Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE