Accession Number : ADP007912

Title :   Mechanism of Chemical Etching of Doped GaAs by C1 2,

Corporate Author : IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Personal Author(s) : Houle, F. A.

Report Date : 22 MAY 1992

Pagination or Media Count : 3

Abstract : Consideration of product volatility and thermodynamic stability have been central to models developed for the thermal etching and deposition of GaAs by C121,2 Mass spectrometric studies of the etching chemistry have tended to support sonic of the basic assumptions of these models: that the thermodynamically most stable product is formed and that product volatility controls the etch rate. Surface analyses, for example, have revealed the presence of a Ga-rich scale after etching, to be expected if the As chlorides are more volatile and desorb more readily. Consequently, models of beam modification of GaAs in the presence of C12 have focussed on how energetic particles or light might perturb the thermal reaction. In this work the validity of the basis for these models has been examined by investigation of the etching chemistry of GaAs by molecular beam mass spectrometry and in situ Auger spectroscopy.

Descriptors :   *ETCHING, *MOLECULAR BEAMS, *CHLORINE, CHEMISTRY, CHLORIDES, CONTROL, DEPOSITION, LIGHT, MASS SPECTROMETRY, MODELS, MODIFICATION, PARTICLES, RATES, SCALE, SPECTROMETRY, STABILITY, SURFACES, THERMODYNAMICS, VOLATILITY.

Subject Categories : Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE