Accession Number : ADP007913

Title :   UV Laser-Induced Interaction of C12 with GaAs 110,

Corporate Author : COLUMBIA UNIV NEW YORK MICROELECTRONICS SCIENCE LAB

Personal Author(s) : Haase, G. ; Liberman, V. ; Shih, M. C. ; Osgood, R. M.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : We have studied the UV laser-induced interaction of molecular chlorine with a GaAs(110) surface under ultra-high vacuum (UHV) conditions. Unlike previous studies of this system, we concentrated on well-defined surfaces, known coverages and low laser fluences. The experimental setup included a low energy electron diffraction apparatus, an Auger electron spectrometer and a differentially pumped mass spectrometer for thermal desorption spectra (TDS) and time-of-flight (TOF) measurements. Without illumination, chlorine was found to adsorb molecularly and dissociatively on n-GaAs(110) surfaces at 85 K. The laser experiments were done with a 193- and 351-nm excimer laser, at fluences below 5 mJ/cm2. Illumination of a molecular chlorine-covered surface at 85 K with 193 nm excimer laser radiation led to the formation of AsCI3, which desorbed at 180 K. Illumination with 351-nm radiation resulted in the formation of smaller amounts of arsenic chloride on the surface.

Descriptors :   *CHLORINE, *DESORPTION, *PHOTOCHEMICAL REACTIONS, *LASER PUMPING, *GALLIUM ARSENIDES, ARSENIC, AUGER ELECTRONS, CHLORIDES, DIFFRACTION, ELECTRON DIFFRACTION, EXCIMERS, ILLUMINATION, INTERACTIONS, LOW ENERGY, MASS SPECTROMETERS, MEASUREMENT, RADIATION, SPECTROMETERS, SURFACES, ULTRAVIOLET LASERS, ULTRAHIGH VACUUM.

Subject Categories : Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE