Accession Number : ADP007916

Title :   Adsorption and Desorption Kinetics for Si(Csub 2 H sub 5)Sub 2 H sub 2 on Si(111) 7x7,

Corporate Author : STANFORD UNIV CA DEPT OF CHEMISTRY

Personal Author(s) : Coon, P. A. ; Wise, M. L. ; George, S. M.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : Diethylsilane (DES), Si(C2H5)2H2, is a promising candidate for the atomic layer epitaxy of silicon. Alkylsilanes are advantageous because they are less toxic and flammable than silanes. The reactions of organosilanes with silicon surfaces are also important both fundamentally and technologically. This study explored the adsorption and desorption kinetics for Si(C2H5)2H2 on Si(111) 7x7 using laser induced thermal desorption (LITD) and temperature programmed desorption (TPD) technique.

Descriptors :   *ADSORPTION, *DESORPTION, *SILANES, *SURFACE CHEMISTRY, *LASER PUMPING, KINETICS, LASERS, LAYERS, SILICON, ALKYL RADICALS, THERMAL PROPERTIES.

Subject Categories : Physical Chemistry
      Radiation and Nuclear Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE