Accession Number : ADP007919
Title : Laser-Induced Deposition of Amorphous Silicon: Relations between Chemical Processing and Performance,
Corporate Author : HEIDELBERG UNIV (GERMANY F R)
Personal Author(s) : Hess, Peter
Report Date : 22 MAY 1992
Pagination or Media Count : 2
Abstract : Hydrogenated, amorphous silicon (a-Si:H) is of great interest for thin film devices used, for example, for the transformation of photon energy and as semiconductor material. Important applications are thin film solar cells, thin film transistors for liquid crystal displays, photoreceptors for electrophotography and laser printing and image sensors. To improve and optimize the properties of the material for specific applications it is necessary to control the formation of the three dimensional network during the solidification process (bandgap engineering). Incorporation of hydrogen into the network reduces the density of defects near the middle of the bandgap (gap states) . For optimal performance a specific binding configuration should be realized. Distortions in the metastable silicon network, especially in the bond angle, are believed to be responsible for the tail states at the bandgap edges.
Descriptors : *PHOTORECEPTORS, *LASER PUMPING, *PHOTOCHEMICAL REACTIONS, *DEPOSITION, CELLS, CONTROL, ELECTROPHOTOGRAPHY, ENERGY, LIQUID CRYSTALS, MATERIALS, PHOTONS, SEMICONDUCTORS, SILICON, SOLAR CELLS, THIN FILMS, THREE DIMENSIONAL, TRANSFORMATIONS, TRANSISTORS, GERMANY.
Subject Categories : Radiation and Nuclear Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE