Accession Number : ADP007933

Title :   A Study of Structural Properties of Non-Stoichiometric Zinc Oxide Films Deposited by e-Beam Evaporation Technique,

Corporate Author : NANJING UNIV (CHINA) DEPT OF PHYSICS

Personal Author(s) : Chen, Rut-yu ; Yuan, Chang-Sheng ; Wang, Qi-he

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : Non-stoichiometric ZnOx (0.5<x<l) films with different O/Zn composition ratios have been successfully deposited by e-beam evaporation technique under different conditions. Such zinc oxide films were analyzed using XPS method. X-ray diffraction was used to detect the crystallite orientation of ZnOx films with various temperatures of the substrates. The thicknesses of the films were measured by an interferential Microscope. Van der Pauw method was used to measure the electrical resistivity of the films. Zinc oxide films have been widely studied recently. As one of the functional films, they take much more advantages over other similar films. The (002) line for zinc oxide films is more stronger than every line observed for indium oxide films and some other films. Zinc oxide has extremely low vapor pressure, and zinc oxide films seem to be more stable than other similar films.

Descriptors :   *FILMS, *ZINC OXIDES, *DEPOSITION, DIFFRACTION, ELECTRICAL CONDUCTIVITY, EVAPORATION, MICROSCOPES, PRESSURE, RATIOS, SUBSTRATES, TEMPERATURE, VAPOR PRESSURE, X RAY DIFFRACTION, CHINA, ELECTRON BEAMS, X RAY PHOTOELECTRON SPECTROSCOPY, INDIUM COMPOUNDS.

Subject Categories : Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE