Accession Number : ADP007937

Title :   Scanning Tunneling Microscopy Studies of Silicon Molecular Beam Epitaxy,

Corporate Author : WISCONSIN UNIV-MADISON

Personal Author(s) : Lagally, M. G. ; Mo, Y. W.

Report Date : 22 MAY 1992

Pagination or Media Count : 4

Abstract : It has been recognized since the beginning of serious studies in surface science that kinetic processes underpin a whole range of surface phenomena, including, for example, phase transformations and ordering, epitaxial growth, and surface chemical behavior. However, with few exceptions, available techniques have not lent themselves well to obtaining a truly microscopic view of such kinetic processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (i.e., large dynamic range in resolution) scanning tunneling microscopy (STM) does afford this opportunity. In this talk, we briefly review the types of surface kinetics measurements that can be made using STM. It should be pointed out that the use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field; hence much remains to be accomplished. We have concentrated our investigations on the initial stages of molecular beam epitaxy of Si and Ge on Si(001) and will use this surface in our examples.

Descriptors :   *EPITAXIAL GROWTH, *MOLECULAR BEAMS, *TUNNELING(ELECTRONICS), DYNAMIC RANGE, KINETICS, MEASUREMENT, PHASE TRANSFORMATIONS, RESOLUTION, SCANNING, SURFACES, TRANSFORMATIONS, SCANNING ELECTRON MICROSCOPES, SILICON.

Subject Categories : Test Facilities, Equipment and Methods
      Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE