Accession Number : ADP007966
Title : Chemical Beam Epitaxy for Opto-electronics and Electronics Applications,
Corporate Author : AT AND T BELL LABS MURRAY HILL NJ
Personal Author(s) : Tsang, W. T.
Report Date : JUL 1992
Pagination or Media Count : 3
Abstract : Within the past few years, the progress in Chemical Beam Epitaxy (CBE) has been tremendous. It has attracted a great deal of interest from the MOCVD and MBE communities because it offers solutions to some of the most difficult problems encountered with each technique. The results thus far clearly demonstrated that high quality InGaAs/InP materials and heterostructures can be routinely prepared by CBE. With new metalorganic aluminum compounds such as triisobutylalumium (TIBAI), trimethylamine alane (TMN A1H3), and others, high quality AlGaAs with low residual carbon background has successfully been prepared. Both AlGaAs/GaAs and InGaAsP/InP electronic and photonic devices with the best state-of-the-art performance have been prepared. With the use of reflection high energy electron diffraction (RHEED), modulated beam mass spectrometry (MBMS) and other vacuum diagnostic techniques, very useful information has been obtained in understanding the metalorganic reaction chemistries on substrate surfaces. Such understandings are not only important for CBE, but also for MOCVD.
Descriptors : *ALUMINUM, *INDIUM PHOSPHIDES, *GALLIUM ARSENIDES, *EPITAXIAL GROWTH, ALUMINUM COMPOUNDS, BACKGROUND, CARBON, CHEMICALS, ELECTRON DIFFRACTION, ELECTRONICS, HIGH ENERGY, MASS SPECTROMETRY, MATERIALS, PHOTONICS, QUALITY, REFLECTION, RESIDUALS, STATE OF THE ART, SUBSTRATES, SURFACES, VACUUM, ALUMINUM GALLIUM ARSENIDES, ORGANOMETALLIC COMPOUNDS.
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE