Accession Number : ADP007967

Title :   Doping Distributions in III-V Semiconductors,

Corporate Author : AT AND T BELL LABS MURRAY HILL NJ

Personal Author(s) : Schubert, E. F.

Report Date : JUL 1992

Pagination or Media Count : 8

Abstract : Doping distributions with spatially abrupt boundaries and high concentrations become increasingly important for compound semiconductor devices. A good understanding of the limitations of profiling techniques is required for such doping distributions. Two profiling techniques, capacitance-voltage (C-V) profiling and secondary ion mass spectrometry (SIMS), are used to study ultra-thin doping profiles and the limitations of the characterization techniques are analyzed.

Descriptors :   *DOPING, *SEMICONDUCTOR DEVICES, BOUNDARIES, CAPACITANCE, DISTRIBUTION, IONS, LIMITATIONS, MASS SPECTROMETRY, PROFILES, SECONDARY, SEMICONDUCTORS, VOLTAGE.

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE