Accession Number : ADP007969
Title : Selective Epitaxial Growth of AlGaAs by MOCVD Using Dialkylmetalchloride,
Corporate Author : UNIVERSITY OF ELECTRO-COMMUNICATIONS TOKYO (JAPAN)
Personal Author(s) : Yamaguchi, Ko-ichi ; Okamoto, Kotaro
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : Selective epitaxial growth by metalorganic chemical vapor deposition (MOCVD) is expected to be one of the important technologies to fabricate microstructures of semiconductor devices. Recently, selective epitaxial growth has been applied to fabricate quantum well wire's. In the fabrication of such a fine structure, good selectivity of deposition and excellent controllability of the ultrafine structure of epilayers is required. Many studies concerning to the selective epitaxial growth of III-V compound semiconductors by MOCVD have been reported. We investigated the selective epitaxial growth of GaAs and AlGaAs by atmospheric pressure (AP)-MOCVD using TMGA and TMAI.
Descriptors : *EPITAXIAL GROWTH, *SEMICONDUCTOR DEVICES, *ALUMINUM GALLIUM ARSENIDES, BAROMETRIC PRESSURE, FABRICATION, SEMICONDUCTORS, STRUCTURES, VAPOR DEPOSITION, VAPORS, JAPAN.
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE