Accession Number : ADP007970

Title :   Selective Growth of InP/GaInAs Heterostructures Using Metalorganic Molecular Beam Epitaxy,

Corporate Author : AT AND T BELL LABS MURRAY HILL NJ

Personal Author(s) : Wang, Y. L. ; Feygenson, A. ; Hamm, R. A. ; Ritter, D. ; Weiner, J. S.

Report Date : JUL 1992

Pagination or Media Count : 4

Abstract : Selective area growth is used in the fabrication of Si epitaxial devices such as bipolar transistors. This growth technique facilitates the preparation of very complex self-aligned and buried transistor structures. Selective growth has been investigated in the III-V materials, without, however, any significant results pertaining to the optical or electrical quality of the material grown, or device results. In this work, we investigate selective growth of InP and GaInAs on S'02-masked InP substrates using metalorganic molecular beam epitaxy (MOMBE). Group Ill and V elements are derived from triethylgallium and trimethylindium, and AsH3 and PH3 respectively. Excellent selectivity is achieved in the temperature range from 5 10 to 540 deg C.

Descriptors :   *BIPOLAR TRANSISTORS, *EPITAXIAL GROWTH, FABRICATION, MATERIALS, MOLECULAR BEAMS, PREPARATION, QUALITY, STRUCTURES, SUBSTRATES, TEMPERATURE, INDIUM PHOSPHIDES, GALLIUM ARSENIDES.

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE