Accession Number : ADP007971

Title :   In Situ Mass Spectrometric Analysis of the Mechanism of Selective-Area Epitaxy by MOMBE,

Corporate Author : NIPPON TELEGRAPH AND TELEPHONE CORP IBARAKI OPTO-ELECTRONIC LABS

Personal Author(s) : Ohki, Y. ; Hiratani, Y.

Report Date : JUL 1992

Pagination or Media Count : 4

Abstract : To understand the growth mechanism of metal-organic molecular beam epitaxy (MOMBE), an analysis of the chemical species involved in the growth reaction was made by in situ mass spectrometry. We have reported that the decomposition of metal-organics (MO's) is largely affected by the surface material. Hence, it is expected that selective-area epitaxy can be carried out by utilizing the difference between the reaction characteristics on a bare semiconductor surface and those on a masked surface. In this paper we report on the results of mass spectrometric measurements of the species desorbed from various substrates under MOMBE growth conditions. Preliminary results for a novel in situ selective-area epitaxy of GaAs using a thin oxide layer of GaAs as a mask is also presented-5).

Descriptors :   *EPITAXIAL GROWTH, *ORGANOMETALLIC COMPOUNDS, CHEMICALS, DECOMPOSITION, LAYERS, MASKS, MASS SPECTROMETRY, MEASUREMENT, MOLECULAR BEAMS, OXIDES, SEMICONDUCTORS, SUBSTRATES, SURFACES, JAPAN.

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE